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SD1398
RF & MICROWAVE TRANSISTORS 850-960 MHz APPLICATIONS
.850 .24 .COMMON .OVERLAY .GOLD .P
- 960 MHZ VOLTS EMITTER GEOMETRY METALLIZATION OUT = 6.0 W MIN. WITH 10.0 dB GAIN
.230 6LFL (M142) epoxy sealed ORDER CODE SD1398 BRANDING SD1398
PIN CONNECTION
DESCRIPTION The SD1398 is a gold metallized epitaxial silicon NPN transistor designed for high linearity Class AB operation cellular base station applications. The SD1398 can also be operated Class C. The SD1398 is internally input matched and can be used as a driver for the SD1423 or SD1424. ABSOLUTE MAXIMUM RATINGS (T case = 25 C)
Symbol Parameter Value Unit
1. Collector 2. Base
3. Emitter
VCBO VCES VEBO IC PDISS TJ T STG
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature
50 35 3.5 2.4 53 +200 - 65 to +150
V V V A W C C
THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance
September 8, 1993
3.3
C/W
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SD1398
ELECTRICAL SPECIFICATIONS (T case = 25 C) STATIC
Symbol Test Conditions Value Min. Typ. Max. Unit
BVCBO BVCEO BVEBO I CEO I CBO hFE
IC = 5mA IC = 5mA IE = 5mA VCE = 24V VCB = 24V VCE = 10V
IE = 0mA IB = 0mA IC = 0mA IE = 0mA IE = 0mA IC = 0.1A
50 24 3.5 -- -- 20
-- -- -- -- -- --
-- -- -- 1.0 1.0 100
V V V mA mA --
DYNAMIC
Symbol Test Conditions Value Min. Typ. Max. Unit
POUT c GP COB
Note: P IN
f = 850 -- 960 MHz f = 850 -- 960 MHz f = 850 -- 960 MHz f = 1 MHz =
0.60w
VCE = 24 V VCE = 24 V VCE = 24 V VCB = 24 V
ICQ = 25 mA ICQ = 25 mA ICQ = 25 mA
6 -- 10 --
-- 50 12 7.5
-- -- -- 8.5
W % dB pF
TYPICAL PERFORMANCE
CLASS AB BROADBAND OUTPUT POWER vs INPUT POWER
OUTPUT POWER vs INPUT POWER
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SD1398
IMPEDANCE DATA
ZIN 900 MHz 850 MHz 960 MHz
ZCL
960 MHz 850 MHz
900 MHz
FREQ. 850 MHz 900 MHz 950 MHz
ZIN () 2.6 + j 5.4 3.3 + j 6.1 4.6 + j 5.9
ZCL () 9.5 + j 13.5 9.9 + j 15.0 8.6 + j 13.0
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SD1398
TEST CIRCUIT
C1, C2 C7, C11 C3 C4, C5 C6, C10 C8 C9 D1
: : : : : :
240pF ATC Size A 0.1MFD 50Vdc, CK05 Type 1500pF Feedthru #9900-381-6004 Murata/Erie 0.8 - 8.0pF Johanson Gigatrim 0.01 MFD 100Vdc CK05 Type 10MFD Electrolytic, 63Vdc
FB-1, FB-2 FB-3 L1 R1 R2
: 2.5 Turns, #22 AWG, Ferrite Bead : Ferrite Bead L1 Cold End : 3 Turns, #22 AWG, 0.125" I.D. : 150 in 5% Carbon Comp : 51, Chip Resistor Er = 10.2, Height 0.05", Teflon Glass
: IN5661 Board Material:
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SD1398
TEST CIRCUIT LAYOUT
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SD1398
PACKAGE MECHANICAL DATA Ref.: Dwg. No.12-0142
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
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